添加剂对LAP晶体性能的影响  

EFFECT OF ADDITIVE (NH 4) 3PO 4ON THE GROWTH OF LAP CRYSTAL

作　　者：林红[1,2] 朱春城 朱军[1,2] 

机构地区：[1]黑龙江农垦师范专科学校 [2]哈尔滨工业大学

出　　处：《哈尔滨师范大学自然科学学报》1998年第4期81-84,共4页Natural Science Journal of Harbin Normal University

摘　　要：选用（ＮＨ４）３ＰＯ４作添加剂，生长了不同添加量的ＬＡＰ晶体．实验发现：添加（ＮＨ４）３ＰＯ４后，扩大了晶体生长的过饱和温区，抑制了杂晶的生长，提高了晶体利用率．The effect of different quantities of additive (NH 4) 3PO 4 on the growth of LAP single crystal was studied in this paper. It was found during experiments that, supersaturate temperature region in which crystals grew was expanded, demands of temperature controlling were decreased, the growth of foreign crystals was effectively retrained. Improve the ratio of utilization.

关 键 词：添加剂 晶体生长 形貌 过饱和温区 LAP晶体 杂晶 

分 类 号：O782[理学—晶体学] O734.1