Ge量子点材料的制备工艺研究  

A STUDY ON THE PREPARATION OF Ge QUANTUM DOTS

作　　者：陈静[1] 吴雪梅[1] 金宗明[1] 诸葛兰剑[1] 

机构地区：[1]苏州大学薄膜材料实验室,苏州215006

出　　处：《苏州大学学报（自然科学版）》1998年第3期39-43,共5页Journal of Soochow University(Natural Science Edition)

摘　　要：采用射频磁控技术,用Ge、SiO_2的复合靶制备锗纳米晶镶嵌在二氧化硅中的复合薄膜.作为量子点的Ge纳米晶粒的尺寸是决定这类材料物性的关键,因而研究对镶嵌在SiO_2中的Ge晶粒尺寸调制的工艺十分重要.本文研究了制备过程中各种工艺参数与薄膜中Ge晶粒尺寸的关系.结果表明通过溅射时控制基片温度能有效地对锗晶粒尺寸进行调制.The composite films of Ge nanocrystallites (nc-Ge) embedded in SiO2 glassy matrix were prepared by r-f magnetron co-sputtering technique using a Ge,SiO2 composite target. As the physical properties of this kind of material are dependent on the size of the semiconductor crystallites (quantum dots),it is very important to investigate the preparing technology in order to modulate the size of semiconductor nanocrystallites (to investigate the preparing technology in order tmodulate the size of semiconductor nanocrystallites). A series of work was done to study the relation of the size of Ge nanocrystallites on the preparation parameters. It is found that the size of nc-Ge can be modulated effectively by controlling the substrate temperature during preparing under a proper sputtering power.

关 键 词：锗 量子点 射频磁控溅射 制备 半导体 

分 类 号：TN304.11[电子电信—物理电子学]