高精度CMOS Wildar多值电压带隙基准电路设计  

Design of CMOS Wildar Bandgap Voltage Reference with High Precision Multi-Output

作　　者：王永寿[1] 吴金[1] 郑丽霞[1] 赵霞[1] 

机构地区：[1]东南大学IC学院,南京210096

出　　处：《半导体技术》2009年第12期1244-1247,共4页Semiconductor Technology

摘　　要：基于经典Wildar带隙基准结构,通过单级高增益低失调运放及其闭环负反馈设计,将电压求和模式输出与电阻负载驱动紧密结合,同时增加简单的单管并联高阶补偿结构,实现了一种具有较大负载驱动能力的高精度多值低压基准输出,解决了经典基准电路在补偿精度与PSRR方面的局限性。CSMC 0.5μm CMOS工艺仿真结果表明,在-40~125℃,一阶补偿的温度系数为6×10-6/℃,输出电阻支路采用并联MOS管的高阶补偿后,温度系数下降到1.27×10-6/℃,低频下电源抑制比达到-57 dB。A high precision Widlar bandgap voltage reference with multi-output, load-drive capability, and improved structure of single-stage high-gain operational amplifier was presented. The PSRR performance was significantly improved with a high-gain operational amplifier, and its temperature coefficient was reduced by a simple compensation structure which was realized with only a MOS transistor. Simulated in CSMC 0.5 μm CMOS process, it has a temperature coefficient in - 40 to 125 ℃ range of 6 × 10^-6/℃, and 1.27× 10^-6/℃ if second-order compensation is applied. Its PSRR is higher than - 57 dB.

关 键 词：带隙基准 低压多路输出 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]