BaFX:Eu(X:Cl,Br)中电子陷阱的研究  

A Study on Electron Traps in BaFX: Eu (X: Cl, Br)

作　　者：熊光楠[1] 娄素云[1] 李岚[1] 赵新丽 

机构地区：[1]天津理工学院材料物理研究所,300191

出　　处：《天津理工学院学报》1998年第3期1-4,共4页Journal of Tianjin Institute of Technology

基　　金：国家自然科学基金

摘　　要：X线影像板需要近红外光激励．掺入Ca2＋，S2＋，Mg2＋后，用650～700um光激励BaFX：Eu2＋，可以更为灵敏．用正电子湮没寿命谱，电子顺磁共振谱，加热发光谱和光激励发光谱，研究了X射线辐照后BaFx：Eu（X：CI，Br）电子陷阱的性质、状态、密度和转换．The X-ray image Plate will need near infrared light to stimulate. BaFBr:Eu2+may be sensitive to stimulate further into 650-700 urn by doping with Ca2+,Sr2+,Mg2+. It is shown by positron annihilation lifetime, electron paramagnetic resonance, thermoluminescence and photostimulation luminescence that upon X-ray irradiation the nature states,density and charge of the photostimulatable electron traps in BaFX: Eu(X: Cl,Br)have been studied arter x-ray irradiation.

关 键 词：光激励发光 BaFCl X线影像板 电子陷阱 BAFBR 

分 类 号：O482.31[理学—固体物理] O434.14[理学—物理]