Fe的不同掺杂量对ZnO薄膜光致发光的影响  

The influence of different Fe doping on ZnO films' luminescence performance

作　　者：周婷婷[1] 马书懿[1] 毛雷鸣[1] 丁继军[1] 史新福[1] 

机构地区：[1]西北师范大学物理与电子工程学院,甘肃兰州730070

出　　处：《功能材料》2009年第12期1961-1963,1972,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10874140);甘肃省自然科学基金资助项目(0710RJZA105);甘肃省高分子材料重点实验室开放基金资助项目(KF-05-03)

摘　　要：采用射频磁控溅射在玻璃衬底上制备了不同掺杂量的Fe-ZnO薄膜,分析不同掺杂量对薄膜光学性能的影响。利用X射线衍射仪(XRD)和原子力显微镜(AFM)研究Fe-ZnO薄膜的微观结构和形貌结构。Fe-ZnO薄膜光致发光(PL)性质的研究发现,发光峰主要有蓝光发射和绿光发射,蓝光发射主要是由于电子从导带向锌空位形成的浅受主能级上的跃迁;绿光发射是由于电子从氧空位到锌空位的能级跃迁及导带底到氧错位缺陷能级的跃迁。由透射谱和吸收谱分析,Fe-ZnO薄膜在可见光区的平均透过率为66%,掺杂量为2%Fe的薄膜的禁带宽度最接近于ZnO的禁带宽度。Fe-ZnO films doped with different Fe doping are prepared on glass substrate by r. f. magnetron sputtering system. It is analyzed that the influence of different doping on its luminescence performance. The microstrucure and morphology of Fe-ZnO thin films are studied by X-ray diffraction（XRD） and atomic force microscope （AFM）. The photoluminescence characteristics of Fe-ZnO show the blue luminescence peak and green luminescence peak. The blue emission corresponds to the electron transition from the bottom of the conduction band to the acceptor level of zinc vacancy; The green emission corresponds to the electron transition from the oxygen vacancy to zinc vacancy and from the bottom of the conduction band to the local level composed of oxide misplaced defects. The transmission spectrum and absorption spectrum of Fe-ZnO show that Fe-ZnO films possess a average transmittance of about 66% in the visible region; the band gap of Fe-ZnO with 2% doping is close to the band gap of ZnO.

关 键 词：掺杂 光致发光 跃迁 透射 

分 类 号：O484.1[理学—固体物理] O484.41[理学—物理]