CuO掺杂对WO_3压敏电阻微结构和电学性能的影响  

Effects of CuO doping on the microstructure and electrical properties of WO_3 varistors

作　　者：赵洪旺[1] 花中秋[2] 李统业[2] 陈汉军[1,2] 董亮[2] 王豫[1,2] 

机构地区：[1]西南交通大学材料科学与工程学院,四川成都610031 [2]西南交通大学超导研究开发中心,四川成都610031

出　　处：《功能材料》2009年第12期2004-2007,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50772092)

摘　　要：研究了CuO掺杂对WO3压敏电阻微结构和电学行为的影响,样品采用传统的陶瓷工艺制备。微结构通过扫描电子显微镜(SEM)观察,相结构和成分借助于X射线衍射(XRD)和能谱(EDS)进行分析。结果表明,微量的CuO掺杂能够促进WO3陶瓷的致密化和晶粒生长。根据I-V特性测量结果,0.2%(摩尔分数)CuO掺杂的WO3陶瓷具有线性伏安特性和极小的电阻率。CuO含量的继续增加使样品的非线性电学行为和电阻率又获得恢复,这是因为偏析于晶界处的CuO与两侧的晶粒形成了n-p-n型的双肖特基势垒。The effects of CuO addition on the microstructure and electrical properties of the WO3 varistors were considered in this paper. The samples were prepared using a conventional mixed oxide route. The grain size and microstructure were investigated by scanning electron microscopy （SEM）. The phases and chemical composition were analyzed by X-ray diffraction （XRD） and energy dispersive spectroscopy（EDS）. The results indicate that minor addition of CuO promotes the densification and grain growth of WO3 ceramics. From the I-V measurer ments, the samples present linear current-voltage characteristic and the resistivity is quite low when doped with 0.2mol% CuO. A further increase in CuO content can recover the nonlinear electrical properties, this is because the excess CuO precipitates in the grain boundary and formed n-p-n type double Schottky barriers.

关 键 词：压敏电阻 导电陶瓷 WO3 CUO 

分 类 号：TN304[电子电信—物理电子学]