ESR characters of intrinsic defects in epitaxial semi-insulating 4H-SiC illuminated by Xe light  

作　　者：程萍 张玉明 张义门 郭辉 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》2009年第12期9-12,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60606022);the Advanced Fund(No.9140A08050508);the Applied Materials Innovation Fund (Nos.XA-AM-200607,XA-AM-200704)

摘　　要：The intrinsic defects in epitaxial semi-insulating 4H-SiC prepared by low pressure chemical vapor deposition （LPCVD） are studied by electron spin resonance （ESR） with different illumination times. The results show that the intrinsic defects in as-grown 4H-SiC consist of carbon vacancy （Vc） and complex-compounds-related Vc. There are two other apexes presented in the ESR spectra after illumination by Xe light, which are likely to be Vsi and VcCsi. Illumination time changes the relative density of intrinsic defects in 4H-SiC; the relative density of intrinsic defects reaches a maximum when the illumination time is 2.5 min, and the ratio of Vc to complex compounds is minimized simultaneously. It can be deduced that some Vsi may be transformed to the complex-compounds-related Vc because of the illumination.The intrinsic defects in epitaxial semi-insulating 4H-SiC prepared by low pressure chemical vapor deposition （LPCVD） are studied by electron spin resonance （ESR） with different illumination times. The results show that the intrinsic defects in as-grown 4H-SiC consist of carbon vacancy （Vc） and complex-compounds-related Vc. There are two other apexes presented in the ESR spectra after illumination by Xe light, which are likely to be Vsi and VcCsi. Illumination time changes the relative density of intrinsic defects in 4H-SiC; the relative density of intrinsic defects reaches a maximum when the illumination time is 2.5 min, and the ratio of Vc to complex compounds is minimized simultaneously. It can be deduced that some Vsi may be transformed to the complex-compounds-related Vc because of the illumination.

关 键 词：electron spin resonance low pressure chemical vapor deposition intrinsic defects semi-insulating 4H-SiC 

分 类 号：TM923.323[电气工程—电力电子与电力传动]