Improvements to the extraction of an AlGaN/GaN HEMT small-signal model  

作　　者：蒲颜 庞磊 王亮 陈晓娟 李诚瞻 刘新宇 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第12期25-29,共5页半导体学报（英文版）

基　　金：supported by the National Basic Research Program of China(No.2002CB311903);the Key Program of the Chinese Academy of Sciences(No.KGCX2-SW-107)

摘　　要：The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in largesignal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract Rg. In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S 11 and S 22 is improved, and fT and fmax can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz.The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in largesignal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract Rg. In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S 11 and S 22 is improved, and fT and fmax can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz.

关 键 词：AlGaN/GaN HEMT small-signal model Schottky resistor drain delay 

分 类 号：TN386[电子电信—物理电子学] TN304.23