Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests  

作　　者：何进 马晨月 王昊 陈旭 张晨飞 林信南 张兴 

机构地区：[1]Key Laboratory of Integrated Microsystems,School of Computer & Information Engineering,Peking University Shenzhen Graduate School [2]TSRC,Institute of Microelectronics,School of Electronic Engineering and Computer Science,Peking University

出　　处：《Journal of Semiconductors》2009年第12期30-32,共3页半导体学报（英文版）

基　　金：supported by the Special Funds for the State Key Development Program for Basic Research of China(973);the State Key Development Program for Basic Research of China;the National Natural Science Foundation of China (Nos.60976066,60936005)

摘　　要：A clear correspondence between the gated-diode generation-recombination （R-G） current and the performance degradation of an SOI n-channel MOS transistor after F-N stress tests has been demonstrated. Due to the increase of interface traps after F-N stress tests, the R-G current of the gated-diode in the SOI-MOSFET architecture increases while the performance characteristics of the MOSFET transistor such as the saturation drain current and sub-threshold slope are degraded. From a series of experimental measurements of the gated-diode and SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold voltage as well as a like-line rise of the sub-threshold swing and a corresponding degradation in the trans-conductance are also observed. These results provide theoretical and experimental evidence for us to use the gated-diode tool to monitor SOI-MOSFET degradation.A clear correspondence between the gated-diode generation-recombination （R-G） current and the performance degradation of an SOI n-channel MOS transistor after F-N stress tests has been demonstrated. Due to the increase of interface traps after F-N stress tests, the R-G current of the gated-diode in the SOI-MOSFET architecture increases while the performance characteristics of the MOSFET transistor such as the saturation drain current and sub-threshold slope are degraded. From a series of experimental measurements of the gated-diode and SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold voltage as well as a like-line rise of the sub-threshold swing and a corresponding degradation in the trans-conductance are also observed. These results provide theoretical and experimental evidence for us to use the gated-diode tool to monitor SOI-MOSFET degradation.

关 键 词：MOSFET degradation F-N stress interface traps gated-diode method SOI technology 

分 类 号：TN386.1[电子电信—物理电子学] TU375[建筑科学—结构工程]