稀土正硅酸盐—Y_2SiO_5单晶体的提拉法生长  

Czochralski Growth of Rare Earth Orthosilicates —Y 2 SiO 5 Single Crystals

作　　者：张守都[1] 王四亭[1] 陈杏达[1] 王浩炳[1] 钟鹤裕[1] 张顺兴[1] 徐军[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《人工晶体学报》1998年第1期43-46,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金

摘　　要：用提拉法晶体生长工艺已成功地生长出正硅酸盐—Ｙ２ＳｉＯ５单晶体。使用设备是一台中频感应加热炉。文中讨论了高光学质量掺Ｅｕ离子Ｙ２ＳｉＯ５单晶体的生长工艺，已生长的晶体毛坯直径达３５ｍｍ，长１３０ｍｍ、质量为４６０ｇ、光学质量良好。Single crystals of pure and Eu doped yttrium silicate Y 2SiO 5(YSO) were grown by the Czochralski technique with a medium frequency heated and iridium crucible.The growth technology for Eu doped YSO single crystals of high optical quality are discussed in this paper.The YSO boules were grown with approxi mately 35mm in diameter and 130mm in length and weighed 460g.

关 键 词：激光晶体 引上法 晶体生长 稀土离子 硅酸钇 

分 类 号：O614.322[理学—无机化学] TN244.05[理学—化学]