氚钛片辐照硅基半导体器件电学输出性能  

Electrical Capabilities of Silicon Diode on Tritium-titanium Source Irradiating

作　　者：王关全[1] 杨玉青[1] 张华明[1] 胡睿[1] 魏洪源[1] 熊晓玲[1] 罗顺忠[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《同位素》2009年第4期218-220,共3页Journal of Isotopes

基　　金：中国工程物理研究院科学技术发展基金资助(2007A02001)

摘　　要：制备了多个不同厚度金属钛膜吸附不同量3H的氚钛片,利用这些源片辐照硅基半导体器件,测试并分析了它们的电学输出性能。结果表明,这些氚钛片辐照硅基半导体器件可以输出电流,但由于金属钛对氚源β射线的阻挡,器件输出电流和最大输出功率与钛膜中贮氚量不呈正比增长关系,小的钛膜厚度有利于提高β射线能量利用率。Some tritium-titanium sources with different amount of titanium and tritium were prepared. The silicon semiconductor junction devices were irradiated by the tritium-titanium sources and their electrical output data were measured and analyzed. The results showed that electrical current could be produced as the junction devices irradiated by these tritiumtitanium sources, but the Isc and amount of tritium weren＇t direct proportion because of the absorbability of titanium to β ray of tritium. These results were useful to the design, development and use of tritium powered betavoltaic battery.

关 键 词：氚钛片 辐射伏特效应同位素电池 电学输出性能 

分 类 号：TM910.2[电气工程—电力电子与电力传动]