高电位梯度ZnO压敏电阻大电流冲击下电学性能的研究  

The Electrical Properties of High Potential Gradient ZnO-Based Varistors under High Current Surge

作　　者：柯磊[1] 蒋冬梅[1] 马学鸣[1] 

机构地区：[1]华东师范大学物理系精密光谱科学与技术国家重点实验室,上海200241

出　　处：《电瓷避雷器》2009年第6期44-47,共4页Insulators and Surge Arresters

基　　金：上海市自然科学基金(08ZR1406700);上海市纳米专项基金(0852nm06000)

摘　　要：通过Y2O3掺杂等工艺手段制备出具有高电位梯度值的ZnO压敏电阻,并进行大电流冲击条件下的电学性能测试。实验结果表明,在掺杂0.08%(摩尔浓度)Y2O3后,试样的电位梯度值达到2 460.5 V/mm,残压比为1.48,最大通流容量达到1 263 A,能量耐受密度达到404.7 J/cm3,具有良好的抵抗大电流冲击的性能。掺杂后的试样晶粒尺寸减小到1.5μm,并且分布比较均匀,细致均匀的微观结构有利于试样电位梯度和大电流冲击下电学性能的提高。High potential gradient ZnO-based varistors were fabricated by Y2O3-doping and the electrical properties of varistors under high current surge were investigated. The test result showed that, after doping 0.08 mol% Y2O3, the potential gradient of the sample reached to 2 460.5 V / mm, the residual voltage ratio was 1.48, the maximum discharge current capacity was 1 263 A and the energy absorption capacity was 404.7 J/cm^3. High potential gradient samples had good performance in withstanding high current surge. The ZnO grain size of the sample decreased to 1.5 μm with a uniform size distribution after doping 0.08 tool% Y2O3. Smaller grain size with uniform size distribution was propitious to the promotion of the potential gradient and the electrical properties under high current surge.

关 键 词：ZNO压敏电阻 电位梯度 大电流冲击 Y2O3掺杂 

分 类 号：TM862[电气工程—高电压与绝缘技术]