硅悬臂梁的制造及压阻特性研究  

Fabrication and Characterization Research of Piezoresistive Cantilever Beam

作　　者：杨磊[1] 于虹[1] 赵阳[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《电子器件》2009年第6期1015-1018,共4页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展计划资助项目资助(2006CB300404);国家863项目资助(2007AA04Z301)

摘　　要：简述了硅压阻悬臂梁的工艺流程,在力学参数的测试中,利用原子力显微镜,测得杨氏模量约为133GPa;在力电耦合特性的测试中,原子力显微镜探针对悬臂梁自由端步进下压,利用半导体参数测试仪,测得悬臂梁的位移灵敏度为1.95×10-7-1,力灵敏度为4.22×10-6nN-1。另一方面,与Coventorware模拟结果相比,灵敏度实验值大约是模拟值的1.4倍,与理论值近似,说明当硅悬臂梁厚度进入纳米尺寸后,量子效应和表面效应明显,压阻效应增强。The fabrication process of piezoresistive cantilever is presented. Using the AFM, the Young~ s modulus is obtained as about 133GPa; with the method of pressing cantilever beam tip by AFM tip, we know that displacement sensitivity and force sensitivity is 1.95 × 10-7 A^-1,4.22 × 10-6 nN-1 respectively through the measuse of semiconductor characterization instrument. The experimental results show that doping concentration affects Young＇s modulus of silicon greatly. On the other hand, comparing with simula. tion results of Coventorware,sensitivity from the experimental results is 1.4 times more than simulation which is the same as on theory, and the expesimental sensitivity makes clear that when cantilever beam＇s width is scaled down to nanometers, quantum effect and surface effect become obvious, moreover, piezoresistive effect becomes more evident.

关 键 词：悬臂梁 压阻效应 杨氏模量 灵敏度 

分 类 号：TN16[电子电信—物理电子学]