低功耗有源UHF-RFID标签芯片射频前端的设计  

Design of a Low Power RF Front-End for Active UHF-RFID Tag IC

作　　者：罗世钦[1] 孙玲玲[1] 洪慧[1] 章少杰[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310018

出　　处：《电子器件》2009年第6期1031-1034,共4页Chinese Journal of Electron Devices

基　　金：浙江省重大科技项目资助(2006C11106)

摘　　要：采用SMIC 0.18μm CMOS工艺,设计了一种低功耗的超高频有源RFID标签芯片射频接收前端电路。其中,低噪声放大器(LNA)采用共源共栅源极电感负反馈差分结构,下变频混频器(Mixer)采用吉尔伯特(Gilbert)有源双平衡结构。通过整体及模块电路优化,该电路在较低功耗下仍然具有较好性能。仿真结果表明,整个接收端功耗仅为14 mW,与传统射频前端芯片相比,功耗降低53%;整体增益为21.6 dB,噪声系数7.1 dB,三阶输入截止点-18.9 dBm,满足有源UHF-RFID标签芯片低功耗高性能的应用需求。A low power RF receiver front-end circuit for active UHF-RFID tag IC is designed based on SMIC 0. 18 μm CMOS process. The front-end consists of a low noise cascode differential amplifier with inductive source degeneration and an active doubly balanced Gilbert down-mixer. The circuit performance is well in the condition of low DC power consumption by optimizing the entire circuit. The simulation shows that the power consumption of the entire sink is 14 mW, which reduces 53% by comparing with the tradition RF front-end IC. The front-end achieves the gain of 21.6 dB, the noise figure of 7.1 dB, and the input third-order intercept point of -18.9 dBm from simulation results. All the above parameters meet the requirement of the active UHF-RFID tag IC with low power consumption and high performance.

关 键 词：超高频 有源射频识别 低噪声放大器 混频器 接收前端 

分 类 号：TN4[电子电信—微电子学与固体电子学]