一种基于LDO稳压器的带隙基准电压源设计  

Design of a Bandgap Reference for LDOs

作　　者：金梓才[1] 戴庆元[1] 黄文理[1] 

机构地区：[1]上海交通大学微纳科学技术研究院,微米/纳米加工技术国家重点实验室,薄膜与微细技术教育部重点实验室,上海200240

出　　处：《电子器件》2009年第6期1043-1047,共5页Chinese Journal of Electron Devices

摘　　要：设计了一种结构简单的基于LDO稳压器的带隙基准电压源。由于目前LDO芯片的面积越来越小,所以在传统带隙基准电压源的基础上,对结构做了简化及改进,在简化设计的同时获得了高的性能。该带隙基准使用三极管作为运算放大器的输入,同时省去了多余的等效二极管,并将此结构应用于LDO结构中。对带隙基准的仿真结果表明,在5 V的电源下,产生25×10-6/℃温度系数的带隙基准电压。低频时电源抑制比为138dB。将该带隙基准结合缓冲器应用于LDO稳压器中,对LDO的仿真结果表明,负载特性良好,相位裕度为63.3度。线性负载率也符合要求。此电路简单可行,可适用于各种LDO芯片中。A compact bandgap reference in LDO regulator was designed. Based on the traditional bandgap, the structure was simplified, and the high performance was obtained. Compared with the traditional bandgap,the dynatron becomes the import of the amplifier,leaving out the redundant diodes. The simulation shows that the temperature coefficient is 25 × 10-6/℃ when the power supply rejection ratio is 138 dB at 1 kHz. When the bandgap is applied in the LDO regulation, the simulation results show that load characteristic is well. All the data accord with the requirement. The circuit is feasible and it can be applied to all kinds of LDO chips.

关 键 词：带隙基准电压源 低压差线性稳压器 CMOS 误差放大器 

分 类 号：TN453[电子电信—微电子学与固体电子学]