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机构地区:[1]杭州电子科技大学电子信息学院,杭州310037
出 处:《电子器件》2009年第6期1055-1058,共4页Chinese Journal of Electron Devices
基 金:国家自然科学基金资助(60671024)"基于IC工艺的集成RF薄膜变压器研究"
摘 要:由于高PF(功率因数)宽电压反激式开关电源的变压器漏感会导致过压尖峰很高,需采用箝位电路吸收。目前常用的三种箝位电路有TD箝位(齐纳箝位)、RCD箝位、TRCD箝位电路,论文分别设计了三种50 W单级PFC的箝位电路。对三种箝位电路的箝位电压波形、EMI、温升和效率进行了测试,测试表明它们的温升、EMI依次降低;RCD和TRCD箝位的电源效率大于TD箝位的。Overvoltage spikes are easily caused in Flyback SMPS with high PF(Power Factor) wide range voltage by the leakage inductance of transformer,so the clamp circuits is used to limit the over voltage to protect the MOSFET. Three common types of clamp circuits, TD(Zener clamp) circuit, RCD clamp circuit and TRCD clamp circuits are often used in SMPS. These three types of clamp circuits for 50 W Single- Stage PFC were designed. The clamping voltage waveform, EMI, temperature rise and efficiency of the clamp circuits in SMPS were measured. The measurement results show that TD, RCD and TRCD of the clamp circuits have improved their ability at limiting temperature, and EMI, RCD and TRCD have better efficiency than TD.
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