Anti-control of chaos in p Ge photoconductor  

作　　者：冯玉玲 张喜和 

机构地区：[1]Department of Physics,Changchun University of Science and Technology

出　　处：《Chinese Physics B》2009年第12期5212-5218,共7页中国物理B（英文版）

摘　　要：We present a scheme for the anti-control of chaos in the p-Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this t^Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p-Ge system gradually evolves to fully developed chaotic states.We present a scheme for the anti-control of chaos in the p-Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this t^Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p-Ge system gradually evolves to fully developed chaotic states.

关 键 词：anti-control of chaos p-Ge photoconductor LASER IRRADIATION 

分 类 号：O415.5[理学—理论物理] TN204[理学—物理]