自旋阀结构中的力致磁阻效应  

The magnetoresistive effect induced by stress in spin-valve structure

作　　者：钱丽洁[1] 朱金荣[1] 许小勇[1] 胡经国[1] 

机构地区：[1]扬州大学物理科学与技术学院,扬州225002

出　　处：《功能材料与器件学报》2009年第6期581-586,共6页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(批准号:10347118);江苏省高校自然科学基金(批准号:2006KJB140133;2007KJD140241)资助的课题

摘　　要：采用变分法研究了外应力场下铁磁单层膜、铁磁/反铁磁双层膜系统的磁化性质,进而研究了由铁磁单层膜和铁磁/反铁磁双层膜所构建的自旋阀结构中的磁电阻与外应力场之间的关系。结果表明,铁磁膜中的磁化性质与膜面内所加应力场的大小,方向密切相关,而反铁磁层的嵌入将明显地改变着铁磁层的磁矩向应力场方向磁化的行为。特别地,在应力场方向垂直于铁磁易轴情况下,当应力场Hλ=2(K1+Kup)3M时,将发生磁化从易轴方向到应力方向的突变。为此,可采用自旋阀结构,通过其膜面内的应力场所调控的磁电阻效应,构建纳米尺度下的力磁传感器。Using a method of free energy minimization, the magnetization properties of the ferromagnetic monolayer and ferromagnetic （FM） / antiferromagnetic （AFM） b/layer under the stress field have been investigated. And then the relation between the magnetoresistance（MR） of the Spin -Valve structure and the applied stress field was investigated. Numerical calculation shows that under the stress field, the mag- netization properties of the FM monolayer is obviously different from that of FM / AFM bilayer due to that the AFM layer coupled would obviously block the magnetization of FM layer. This phenomenon resuits to MR of the Spin - Valve structure to become obvious. Specially when the direction of stress field perpendicular to the easy axis, the magnetization direction would change from the easy axis to the stress Based on these investigations, direction at that moment at the stress field equal Hλ=2（k1＋kup）/3M perfect mechanical sensor using the magnetoresistive suggested to be devised experimentally. effect induced by the stress field in nanoscale is suggested to be devised experimentally.

关 键 词：铁磁单层膜 铁磁/反铁磁双层膜 应力场 磁电阻效应 力磁传感器 

分 类 号：O484.2[理学—固体物理] O484.4[理学—物理]