Electrical properties of HfTiO Gate Dielectric Ge MOS capacitors with wet-NO surface pretreatment  

作　　者：ZOU Xiao XU Jing-ping 

机构地区：[1]Scholl of Electromahine ＆ Architecture Engineering, Jianghan University,Wuhan, 430056, P. R. China [2]Department of Electronic Science ＆ Technology, Huazhong University of Science and Technology, Wuhan 430074, China

出　　处：《功能材料与器件学报》2009年第6期599-602,共4页Journal of Functional Materials and Devices

基　　金：supported by the National Natural Science Foundation of China(Grant no.60776016)

摘　　要：Surface pretreatments for preparing HfTiO/GeOxNy stack gate dielectric on n-Ge substrate have been investigated.Excellent performances of Al/HfTiO/GeOxNy /n-Ge MOS capacitor have been achieved with an equivalent oxide thickness of 1.44 nm,physical thickness of 7.2 nm,equivalent permittivity of ~ 35,interface-state density of 2.1×1011 eV-1cm-2,equivalent oxide charge of-1.96×1012 cm-2 and gate leakage current of 2.71×10-4 A/cm2 at Vg = 1 V.Experimental results also indicate that the wet NO pretreatment can lead to excellent interface and gate leakage properties.The involved mechanisms lie in N-barrier role and N incorporation in GeOxNy interlayer,effectively preventing further growth of unstable GeOx during subsequent processing.Surface pretreatments for preparing HfTiO/GeOxNy stack gate dielectric on n -Ge substrate have been investigated. Excellent performances of Al/HfTiO/GeOxNy/n - Ge MOS capacitor have been achieved with an equivalent oxide thickness of 1.44 nm, physical thickness of 7.2 nm, equivalent per- mittivity of - 35, interface - state density of 2.1 × 10^11 eV-1cm-2, equivalent oxide charge of - 1.96 × 10^-12 cm-2 and gate leakage current of 2.71× 10^-4 A/cm2 at Vg = 1 V. Experimental results also indicate that the wet NO pretreatment can lead to excellent interface and gate leakage properties. The involved mechanisms lie in N -barrier role and N incorporation in GeOxNy interlayer, effectively preventing further growth of unstable GeOx during subsequent processing.

关 键 词：磁性材料 功能材料 HfTiO 电工材料 

分 类 号：TM271[一般工业技术—材料科学与工程]