高灵敏度的CMOS霍尔磁场传感器芯片设计  

Design of High Sensitive CMOS Monolithic Magnetic Hall Sensor

作　　者：徐跃[1] 

机构地区：[1]南京邮电大学电子科学与工程学院,江苏南京210003

出　　处：《仪表技术与传感器》2009年第12期14-16,25,共4页Instrument Technique and Sensor

基　　金：南京邮电大学基金项目(NY207087)

摘　　要：以霍尔电压及失调电压的状态为出发点，提出了一种更简单的霍尔信号再生电路设计方案。即采用由传输门、保持电容和电压跟随器构成的采样保持电路实现对混叠信号（包括霍尔信号和失调电压）180。移相，再经相减电路去除失调电压。后仿真结果表明该芯片工作在2．5～3．3V电压下，能对0．1mV的霍尔信号进行1500倍放大并输出CMOS数字信号，可允许的最大失调电压为4mV．Based on analyzing the status of hall and offset voltage, a completely new and comparatively simple hall signal regeneration circuit was brought forward. That is, using a sampling and holding （S/H） circuit which composes of a transmission gate, a holding capacitance and a voltage follower to shift the 180° phase of the mix signals（ contains the hall and offset voltage）. Subsequently, the mix signals input a subtraction circuit to be wiped off the offset voltage. The post layout simulation results show that it can amplify minimum 0.1 mV input hall signal with 1 500 amplification factor and output CMOS digital signal is from 2.5 to 3.3 V working voltage. The tolerable input maximum offset voltage is up to 4 inV.

关 键 词：低失调 磁感应传感器 采样保持 信号再生 

分 类 号：TP212.3[自动化与计算机技术—检测技术与自动化装置]