基于电子波干涉红外探测器的研究  

Study on the Infrared Detector Based On the Electron Wave Interference

作　　者：官文栎[1] 连洁 王青圃 程兴奎 于元勋[1] 

机构地区：[1]山东教育学院物理系,济南250013 [2]信息科学与工程学院 [3]物理与微电子学院,济南250100

出　　处：《半导体光电》2009年第6期811-814,共4页Semiconductor Optoelectronics

基　　金：山东省中青年科学家奖励基金资助项目

摘　　要：电子波干涉法是一种新的量子阱探测器能带结构计算方法,该方法是基于电子波在量子阱界面的反射和干涉效应提出的。利用电子波干涉法,设计了一种新型的宽带量子阱红外探测器。对这种探测器的能带结构进行了计算,分析了这种新型探测器的响应带宽和暗电流特性。理论计算表明:电子在干涉形成的分离能级间跃迁可形成多个响应带,这些响应带之间相互交叠可实现宽带响应;器件的暗电流在微安量级且随温度的变化不大。共振隧穿电流随温度的变化较小,是暗电流的主要组成部分;而热离子激发电流随温度的变化较大,但对暗电流的影响不大。The electron wave interference model is a new method to calculate the energy band structure of quantum well. This method is based on the reflectance and interference effects of electron wave at interfaces between the wells and the barriers. Using this method, a new type of broad band quantum well infrared photodetector was designed. The energy band structure of this photodetector was calculated. And its response bandwidth and the characteristic of dark current were analyzed, respectively. The results show that several response bands appear due to the electron transitions between the separate energy levels caused by electron interference. These response bands overlap and the broad band response can be realized. The dark current of this photodetector is at the microampere magnitude and will slightly change with temperature. The main part of the dark current refers to the resonant tunneling current changing slightly with temperature. The thermionic emission current changes sharply with temperature, and has few contribution to the total dark current.

关 键 词：电子波 反射和干涉 A1GaAs/GaAs量子阱红外探测器 

分 类 号：TN215[电子电信—物理电子学]