大功率半导体激光器功率转换效率的研究  

Study on Power Conversion Efficiency of High-power Laser Diodes

作　　者：崔碧峰[1] 黄宏娟[1] 张蕾[1] 张楠[1] 王智群[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《半导体光电》2009年第6期835-837,873,共4页Semiconductor Optoelectronics

基　　金：北京工业大学博士启动基金资助项目

摘　　要：针对980 nm大功率半导体激光器,分析了不同腔长下,最佳工作点功率转换效率的分布,分别计算了对应的光电转换效率,电压损失效率,阈值损失效率与缺陷损失效率随腔长的变化情况。分析表明随着腔长的增加,最佳输出功率值增加,但功率效率有所下降。缺陷损失效率是导致光电转换效率下降的主要因素,降低内损耗是提高最佳工作点功率转换效率最直接的方法。给出了不同内损耗情况下,最佳功率转换效率随腔长的分布。For the 980 nm high-power laser diodes manufactured by Beijng Opto-electronic Technology Lab, the relation between the power conversion efficiency of the best operating point and the cavity length is analyzed. Experimantal results show that the best output power increases while the power conversion efficiency decreases with the cavity length increasing. Analyses indicate that the defect power is the primary factor resulting in the decrease of photoelectric conversion efficiency and reducing the inner loss is most obvious way to improve the power efficiency of the best operating point.

关 键 词：半导体激光器 功率转换效率 内损耗 大功率 

分 类 号：TN248.4[电子电信—物理电子学]