Z扫描法研究nc-Si／SiNx多量子阱材料非线性光学特性  

Study on Non-linear Optical Properties of nc-Si/SiN_x MQW with Z-scan Method

作　　者：沈海波[1] 郭亨群[1,2] 王国立[1] 王加贤[1] 吴志军[1] 宋江婷[1] 徐骏[3] 陈坤基[3] 王启明[2] 

机构地区：[1]华侨大学信息科学与工程学院,福建泉州362021 [2]中国科学院半导体研究所集成光电子国家重点实验室,北京100083 [3]南京大学物理学系,南京210093

出　　处：《半导体光电》2009年第6期878-882,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60678053);国家“973”计划项目(2007CB613401);集成光电子国家联合重点实验室开放课题;国家自然科学基金重点项目(60838003);华侨大学科研基金资助项目(07BS108)

摘　　要：采用射频磁控反应溅射技术与热退火处理制备了nc-Si/SiNx多量子阱材料。对样品进行了小角度XRD、Raman光谱、吸收光谱测试,研究了其结构和光学性质。采用皮秒脉冲激光单光束Z-扫描技术研究了样品在非共振吸收区的三阶非线性光学特性。实验结果表明,其非线性折射率为负值,非线性吸收属于双光子吸收。由实验数据计算得材料三阶非线性极化率为7.50×10-8esu,该值比体硅材料的三阶非线性极化率大4个数量级。对材料光学非线性产生的机理进行了探讨,认为材料的非线性极化率的增加来源于材料量子限制效应增强。The nc-Si/SiNx multi-quantum well（MQW）was prepared by RF magnetron sputtering technique and thermal annealing. The sample was tested by low-angle XRD, Raman spectrometry and absorption spectrometry, and its structure and optical properties were studyed. Nonlinear optical properties of nc-Si/SiNx MQW were probed by a Z-Scan Technique. The experimental results show that the nonlinear refractive index of the sample is a negative value and the nonlinear absorption is two-photon absorption. After calculating, it is obtained that χ^（3） of the sample is 7.50 10^-8esu, the value of nc-Si/SiNx MQW is 4 orders of magnitude higher than that of bulk Silicon. The nonlinear mechanism of the material was discussed. The enhancement of nonlinear refractive index is mainly attributed to the enhancement of quantum confinement.

关 键 词：nc-Si/SiNx多量子阱材料 Z-扫描 非线性折射率 非线性吸收 

分 类 号：O484.4[理学—固体物理]