纳米多孔硅的场致电子发射性能研究  

Electron Field Emission Characteristics of Nanoscale Porous Silicon

作　　者：蒋洪奎[1] 赵永峰[2] 童国平[3] 蔡南科[3] 郑建龙[2] 虞献文[3] 

机构地区：[1]浙江师范大学交通学院 [2]浙江师范大学信息科学与工程学院 [3]浙江师范大学凝聚态物理研究所,浙江金华321004

出　　处：《半导体光电》2009年第6期904-906,922,共4页Semiconductor Optoelectronics

基　　金：浙江省科技厅项目(2008C31013)

摘　　要：对采用阳极氧化法及阴极还原表面处理技术制备的性能稳定的纳米多孔硅,用原子力显微镜(AFM)表征了其微观结构,多孔硅颗粒粒径在30 nm左右。室温条件下测试了多孔硅场电子发射的特性,结果表明,多孔硅具有很好的场致发光性能,在5 V/μm的电场下就可以产生场发射电流。多孔硅的开启电压在1 000 V左右,发射电流随着电压的增大而不断增大,发射电压在2 000 V以上。Nanoscale porous silicon （PS） was prepared by anodic oxidation, cathode reduction and surface treatment technique. The porous silicon particles with the average diameter of about 30 nm were obtained by characterizing their microstructure with atomic force microscope （AFM）. Electron field emission characteristics of porous silicon were investigated at room temperature. The results demonstrate that porous silicon has favorable electroluminescence properties, and the field emission current can be generated only under the electric field of 5 V/ μm. And the turn - on voltage is about 1 000 V. With the increase of the offered voltage, the emission current is enhanced and the emission voltage is over 2 000 V.

关 键 词：多孔硅 阳极氧化法 场电子发射 

分 类 号：TN304[电子电信—物理电子学]