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作 者:宋晋湘[1] 潘志云[1] 姜政 李忠瑞[1] 叶剑[1] 孙治湖[1] 韦正[1] 韦世强[1]
机构地区:[1]中国科学技术大学国家同步辐射实验室,安徽合肥230029 [2]上海光源,上海201204
出 处:《中国科学技术大学学报》2009年第12期1288-1293,共6页JUSTC
基 金:国家自然科学基金(10635060;10725522)资助
摘 要:利用X射线吸收精细结构(XAFS)和X射线衍射(XRD)研究了化学还原法制备的不同磷含量的Ni100-xPx合金的原子和电子结构.结果表明,当x=10时,磷元素的掺入导致了NiP样品中fcc结构的镍晶格扭曲和膨胀,Ni-Ni第一近邻配位的键长约增加0.03.随着磷含量的增加,膨胀和扭曲加剧,当x达到14左右时,样品的fcc-Ni晶格被完全破坏,从而形成非晶态NiP合金.X射线吸收近边结构(XANES)的结果表明,低磷含量(x≤10)时NiP样品的电子结构没有明显的变化,随着磷含量的增加,Ni 4p态的分布变得宽化和越来越弥散.而当x达到26时,有大量电荷从Ni原子转移到P原子.X-ray absorption fine structure (XAFS) and X-ray diffraction (XRD) were utilized to investigate the atomic and electronic structures of Ni100-xPx alloys with different P contents prepared by chemical reduction method. The results show that as x= 10, the doped P element leads to expansion and distortion of the Ni fcc lattice in the NiP sample, and the RNi-Ni increases by about 0.03 A. With the P content increasing, the expansion and distortion are strengthened. It is found that when x increases to a critical value of 14, the lattice of fcc Ni is completely destroyed, and the amorphous NiP alloy is formed. The X- ray absorption near edge structure (XANES) results indicate that at a low concentration (x〈10), no significant change in the electronic structure is observed. However, as P content increases, the distribution of the Ni 4p states becomes more diffuse and broader. When x=26, the white line feature of Ni K-edge implies that a large number of charges are transferred from Ni atoms to P atoms.
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