In掺杂的ZnO纳米棒的共振Raman光谱研究  

Multiple-Phonon Resonant Raman Scattering in In-Doped ZnO Nanorods

作　　者：赵婧[1] 闫小琴[1] 张跃[1] 

机构地区：[1]北京科技大学纳米材料与纳米技术实验室,北京100083

出　　处：《光散射学报》2009年第4期312-316,共5页The Journal of Light Scattering

基　　金：973项目(2007CB936201);国际重大合作项目(50620120439;2006DFB51000);基金项目(50772011;NCET-07-0066)

摘　　要：本文报道In掺杂ZnO纳米棒的成功制备和对其结构以及光荧光性能的详尽研究。在室温条件下ZnO的共振拉曼谱线容易受到很强的荧光干扰,甚至导致共振拉曼谱线完全被湮没。微量In掺杂入ZnO纳米棒中,调控紫外发光峰由378 nm(纯ZnO)红移至397 nm;另外,在制备过程中引入过量的氧,在样品中产生大量缺陷,降低了ZnO的紫外近带边发光峰强度。这两方面导致在室温下可清楚的观察到In掺杂ZnO纳米棒的6阶LO拉曼峰。In this paper, the fabirication of In-doped ZnO nanorods and detailed investigations of their structures and photoluminescence properties were reported. Resonant Raman scattering spectrum is usually influenced by the strong photoluminescence at room temperature, and sometimes even invisible due to the strong near-band-edge luminescence （ultra- violet emission）. The ultaviolet emission of In-doped ZnO nanorods red-shifts from 378 nm （for undoped ZnO） to 397 nm due to a small amount of indium doped into ZnO. Also, the intensity of UV emission decreases because of the existence of large quantity of defects in In-doped ZnO nanorods. Both aspects mentioned above result in the appearance of 6 LO mode in the multiple-phonon resonant Raman spectrum of In-doped ZnO nanorods at room temperature.

关 键 词：ZNO 掺杂 共振拉曼 光致发光 

分 类 号：TN304[电子电信—物理电子学]