CNT-FED背光源中支撑体高度的优化研究  

Optimization Investigation of Spacer Height in CNT-FED Backlight Unit

作　　者：段丽[1] 叶芸[1] 陈勇[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002

出　　处：《光电子技术》2009年第4期257-260,264,共5页Optoelectronic Technology

基　　金：国家"863"计划平板显示重大专项(2008AA03A313);福建省自然科学基金项目(2009J05145);福建省教育厅资助项目(JA08005);福建省教育厅资助项目(JA09003)

摘　　要：利用丝网印刷技术制备碳纳米管阴极并真空封装碳纳米管场发射(CNT-FED)背光源原型器件,研究了支撑体高度对碳纳米管背光源发射性能的影响,实验表明:支撑体高度增加,开启电压随之增加;达到同样的发射电流密度,支撑体越高,亮度也越高。支撑体高度为1000μm和2000μm时,CNT-FED背光源发射性能较好,在电流密度为4 mA/cm2情况下,支撑体高度为1000μm时,亮度为1800 cd/m2;支撑体高度为2000μm时,亮度为3100 cd/m2。选用支撑体高度为2 000μm,制备出86.4 cm液晶平板显示器(LCD)用CNT-FED背光源,亮度最高可达8 000cd/m2,发光均匀性为82%,稳定发射30 h,发射电流无明显衰减。The carbon nanotube-field emission display （CNT-FED） backlight unit was prepared by screen-printing method. The relationship between the height of spacer and emission characteristics of CNT-FED was studied. It was found that the emission characteristics of CNT- FED were affected by the height of spacer. The turned on voltage and brightness depended on the spacer height. The field emission tests indicated that emission characteristics of CNT-FED is better at the height of 1 000 μm and 2 000 μm. At current density of approximate 4 mA/cm^2, the brightness can reach to 1 800 cd/m^2 at the height of 1 000μm, while 3 100 cd/m^2 at the height of 2 000μm. A 86.4 cm CNT-FED backlight unit was fabricated with the spacer of 2 000 gin. Its highest brightness could reach to 8 000 cd/m^2 and the luminescent uniformity was 82%. And there was no significant current attenuatin after 30 h emission test.

关 键 词：碳纳米管 场发射 背光源 

分 类 号：TN383.1[电子电信—物理电子学]