新型自启动带隙基准电压源设计  

Design of Bandgap Voltage Reference with Novel Self-startup Circuits

作　　者：徐勇[1] 赵斐[2] 徐永斌 关宇[1] 关振红[2] 

机构地区：[1]解放军理工大学理学院,南京211101 [2]解放军理工大学气象学院,南京211101 [3]江苏新志光电集成有限公司,南京210016

出　　处：《固体电子学研究与进展》2009年第4期566-568,588,共4页Research & Progress of SSE

摘　　要：提出了一种具有新颖自启动电路的带隙基准电压源设计,相比传统自启动方案,电路规模没有增长的同时电路功耗更低,芯片消耗电流约14μA,性能更加可靠。200片芯片批量统计测试结果表明,电压源输出1.25V±10mV,标准偏差σ仅为0.004V,-55～125°C温度范围内温度系数约15×10-6/°C。芯片测试良率进一步获得提高。A bandgap voltage reference （BVR） with novel self-startup circuits is presented. The less current dissipation of 14 μA is gained, and the better performance is also won eompared with conventional self-startup circuit, while no more components are added. The output voltage of BVR is 1.25 V±10 mV, with a standard deviation（o） of 0. 004 V for 200pcs that were measured. The measured temperature coefficient is less than 15 × 10^-6/℃ from --55 to 125℃. The yield rate of chips is farther increased.

关 键 词：低功耗 带隙基准电压源 启动电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]