太阳能发电用P型单晶硅放电切割特性研究  

Properties Research on Discharge Cutting of P-type Mono-crystalline Solar Silicon

作　　者：毕勇[1] 刘志东[1] 邱明波[1] 汪炜[1] 田宗军[1] 黄因慧[1] 

机构地区：[1]南京航空航天大学机电学院,南京210016

出　　处：《硅酸盐通报》2009年第6期1118-1122,1128,共6页Bulletin of the Chinese Ceramic Society

基　　金：江苏省高技术研究计划资助项目(BG2007004)

摘　　要：通过对P型太阳能发电用单晶硅进行伏安特性测试,检测其在直流脉冲电压下的通电电流,从进电方式和极性选择方面研究了其特殊的电特性,建立了试验的二极管电阻(DR)电路模型,测试发现P型单晶硅具有单向导通性。随后对电阻率2.1Ω.cm的P型太阳能发电用单晶硅进行了放电切割,分别抓取了单脉冲放电电压、电流波形,进一步研究了电特性极其复杂的P型单晶硅在硅片实际切割过程中展现出来的特殊放电切割特性,发现P型单晶硅的切割电流波形呈"斜坡"式,切割后的硅片表面形貌呈"贝壳"状。结果表明,进电有效接触面积越大,P型单晶硅材料的极间电阻就越小,切割电流也就越高,同时对于P型单晶硅放电切割宜采用正极性加工。Researched the special electrical characteristics of P-type mono-crystalline solar silicon under conduction mode and polarity selection through the volt-ampere property test of it which detected the conduction current of it under D.C.pulse voltage,and the circuit model with diode and resistance was created.The test discovered that P-type mono-crystalline silicon had unidirection continuity.Subsequently,P-type mono-crystalline solar silicon with resistivity of 2.1 Ω·cm was cutting and single pulse voltage and current wave was grabbed respectively,which further researched the special discharge cutting properties of P-type mono-crystalline silicon with extremely complicated electrical characteristics in the actual cutting,and found that current wave of P-type mono-crystalline silicon showed ＂ramped＂ and silicon wafer after cutting morphology showed ＂conchoidal＂.The results show that the interelectrode resistance of P-type mono-crystalline silicon will decrease as the available area of the electricity interface growing,but the current of cutting will increase,and positive polarity machining is suitable for discharge cutting P-type mono-crystalline silicon.

关 键 词：极间电阻 单向导通性 放电切割 硅 

分 类 号：TG662[金属学及工艺—金属切削加工及机床]