Gd掺杂对BiFeO_3薄膜电性能的影响  

Enhanced ferroelectric properties of Gd-substitution BiFeO_3 thin films prepared by sol-gel process

作　　者：王秀章[1] 晏伯武[2] 戴志高[1] 刘美风[1] 许胜祥[1] 李文庆[1] 

机构地区：[1]湖北师范学院物理与电子科学学院,湖北黄石435002 [2]黄石理工学院计算机学院,湖北黄石435003

出　　处：《湖北师范学院学报（自然科学版）》2009年第4期12-15,共4页Journal of Hubei Normal University(Natural Science)

基　　金：湖北省教育厅重点科技项目基金资助项目(No:D20082203)

摘　　要：采用溶胶-凝胶方法在FTO/glass底电极上制备了Gd掺杂B iFeO3薄膜。研究了Gd掺杂对B iFeO3薄膜的晶体结构、铁电性能和漏电流的影响.XRD测试表明薄膜获得良好的结晶。铁电性的测试表明,通过Gd掺杂,使薄膜的铁电性得到了增强,剩余极化强度由50.1μC/cm2增加到89.6μC/cm2.BiFeO3 and Bi1-xGdxFeO3 （BGFO） （x =0. 05,0. 10, and 0.15）thin films were deposited on FTO/glass substrates by a sol - gel process. The influences of Gd doping on the films＇leakage current density, mierostructure and ferroclectric properties were studied. X - ray diffraction results show that the good crystal films are gained. The test of ferroclectric properties shows that a maximum value of 89.6 C/cm^2 by 0.05 molar Gd incorporation which is changing from value of 50. 1 C/cm^2 are gained.

关 键 词：Bi1-xGdxFeO3薄膜 溶胶一凝胶法 GD掺杂 

分 类 号：TN304[电子电信—物理电子学]