基于压控单元的单电子晶体管宏模型  

Macro-Model of Single-Electron Transistor Based on Voltage-Controlled Unit

作　　者：周少华[1,2] 熊琦[1] 杨红官[2] 戴大康[2] 曾健平[2] 曾云[2] 

机构地区：[1]湖南工程职业技术学院,湖南长沙410151 [2]湖南大学物理与微电子科学学院,湖南长沙410082

出　　处：《吉首大学学报（自然科学版）》2009年第6期63-65,共3页Journal of Jishou University(Natural Sciences Edition)

基　　金：湖南省教育厅科学研究资助项目(07D025;08D042);湖南省科技计划项目(2008FJ3123)

摘　　要：在对纳米遂穿结(SETJ)及单电子晶体管(SET)的特性进行分析的基础上,笔者采用等效电路的方法,提出了基于压控单元的SET宏模型,仿真得到单电子晶体管的特性曲线.通过器件仿真的输出特性曲线与理想特性曲线的对比,得出曲线的走势与理想曲线基本一致,偏差不大.并且通过计算表明,数值的精度在合理范围内,验证了模型的合理性.Based on the analysis of characteristics in single electron tunneling junction and single-electron transistor, using the equivalent circuit method, macro-model was proposed based on the voltage-controlled unit. Simulation was executed subsequently to get characteristic curves. Comparison between curves was obtained by simulator, and ideal curves was done to indicate the same trend. Numerical calculations verify that the model is reasonable.

关 键 词：等效电路 宏模型 纳米遂穿结 单电子晶体管 

分 类 号：TN32[电子电信—物理电子学] TN710.2