Influence of temperature on Auger recombination lifetime in In_(1-x)Ga_xAs materials  

作　　者：常玉春 田长鑫 马艳 殷景志 高强 王一丁 高福斌 杜国同 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University

出　　处：《Optoelectronics Letters》2010年第1期31-33,共3页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No.60676039);the National High Technology Research and Development Program of China (No.2007AA06Z112);Research Fund for the Doctoral Program of Higher Education of China (No.20060183030);the Science and Technology Department of Jilin Province (No.20070709)

摘　　要：The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm-3 and 1018 cm-3, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1-xGaxAs materials at x<0.3. However, it has a great impact when x>0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In1-xGaxAs is longer than that of n-type In1-xGaxAs with the same temperature, Ga composition and carriers concentration.The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm^-3 and 10^18 cm^-3, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1-xGaxAs materials at x〈0.3. However, it has a great impact when x〉0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In1-xGaxAs is longer than that of n-type In1-xGaxAs with the same temperature, Ga composition and carriers concentration.

关 键 词：材料组成 温度 复合 寿命 空穴浓度 赤霉素 P型 

分 类 号：TN304[电子电信—物理电子学]