Design of a high-performance PJFET for the input stage of an integrated operational amplifier  

作　　者：税国华 唐昭焕 王志宽 欧红旗 杨永晖 刘勇 王学毅 

机构地区：[1]Sichuan Institute of Solid-State Circuits,CETC [2]National Laboratory of Analog ICs [3]National Laboratory of Analog ICs,Chongqing 400060 China

出　　处：《Journal of Semiconductors》2010年第1期34-38,共5页半导体学报（英文版）

基　　金：supported by the Innovative Fund of the China Electronics Technology Group Corporation(CETC)(No.GJ0708020).

摘　　要：With Shockley＇s approximate-channel theory and TCAD tools, a high-voltage, ultra-shallow junction PJFET for the input stage of an integrated operational amplifier （OPA） was realized. The high-performance PJFET device was developed in the Bi-FET process technology. The measured specifications are as follows. The top-gate junction depth is about 0.1 μm, the gate-leakage current is less than 5 pA, the breakdown voltage is more than 80 V, and the pinch-off voltage is optional between 0.8 and 2.0 V. The device and its Bi-FET process technology were used to design and process a high input-impedance integrated OPA. The measured results show that the OPA has a bias current of less than 50 pA, voltage noise of less than 50 nV/Hz^1/2, and current noise of less than 0.05 pA/Hz^1/2.With Shockley＇s approximate-channel theory and TCAD tools, a high-voltage, ultra-shallow junction PJFET for the input stage of an integrated operational amplifier （OPA） was realized. The high-performance PJFET device was developed in the Bi-FET process technology. The measured specifications are as follows. The top-gate junction depth is about 0.1 μm, the gate-leakage current is less than 5 pA, the breakdown voltage is more than 80 V, and the pinch-off voltage is optional between 0.8 and 2.0 V. The device and its Bi-FET process technology were used to design and process a high input-impedance integrated OPA. The measured results show that the OPA has a bias current of less than 50 pA, voltage noise of less than 50 nV/Hz^1/2, and current noise of less than 0.05 pA/Hz^1/2.

关 键 词：PJFET operational amplifier Bi-FET process ultra-shallow junction high input-impedance 

分 类 号：TN722.77[电子电信—电路与系统] TN722.75