溶剂热法制备铝掺杂的氧化锌透明导电薄膜  

Preparation of Transparent Conductive Aluminum Doped Zinc Oxide Films by Solvothermal Method

作　　者：高珊[1] 谷景华[1] 张跃[1] 

机构地区：[1]北京航空航天大学材料科学与工程学院空天材料与服役教育部重点实验室,北京100191

出　　处：《无机化学学报》2010年第1期55-60,共6页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.50436040)资助项目

摘　　要：采用溶剂热法在玻璃基片上沉积铝掺杂的氧化锌透明导电膜(AZO)。研究了前驱溶液中Al3+与Zn2+的物质的量的比nAl3+/nZn2+、溶剂热反应温度和反应时间对薄膜物相、形貌、可见光透过率和电阻率的影响。结果表明,溶剂热法所制备的AZO薄膜具有六方纤锌矿结构,Al3+不仅改善薄膜的导电性而且起矿化剂的作用促进薄膜生长,溶剂热反应时间的增加没有使薄膜显著增厚。采用溶剂热法可制备出可见光平均透过率大于80%、方块电阻小于500Ω的AZO薄膜。Aluminum doped zinc oxide（AZO） films were prepared by solvothermal method. The effects of the molar ratio n Al^3＋/Zn^2＋ in the precursor solution, solvothermal reaction temperature and reaction time on the phase, the morphology, the visible light transmittance and resistance of AZO films were investigated. The results show that AZO films prepared by solovthermal method have a hexagonal wurtzite type structure. Al^3 ＋ not only improves the conductivity of the films but also contributes to the growth of the films as a mineralizer. The thickness of AZO films does not increase remarkably with reaction time. AZO films with an average visible light transmittance more than 80% and a sheet resistance less than 500 Ω are obtained by solvothermal method.

关 键 词：透明导电膜 AZO 溶剂热法 

分 类 号：O614.241[理学—无机化学] O614.31[理学—化学]