Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition  

作　　者：杨杭生 聂安民 邱发敏 

机构地区：[1]State Key Laboratory of Silicon Materials,Department of Materials Science and Engineering,Zhejiang University

出　　处：《Chinese Physics B》2010年第1期451-455,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 50772096);the Educational Department of Zhejiang Province, China (Grant No. 20061365)

摘　　要：Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasmaenhanced chemical vapour deposition. It was found that the introduction of 02 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B2H6 concentration of 2.5% during film deposition, the critical O2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230- 1280 cm^-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasmaenhanced chemical vapour deposition. It was found that the introduction of 02 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B2H6 concentration of 2.5% during film deposition, the critical O2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230- 1280 cm^-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.

关 键 词：cubic boron nitride films infrared spectroscopy plasma-enhanced chemical vapour deposition 

分 类 号：O484.1[理学—固体物理]