Si纳米线的气-液-固生长与结构表征  

Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism and Its Structural Characteristics

作　　者：白振华[1] 范志东[1] 程旭[1] 彭英才[1] 

机构地区：[1]河北大学电子信息工程学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2009年第6期582-586,共5页Journal of Hebei University(Natural Science Edition)

基　　金：河北省自然科学基金资助项目(E2008000626)

摘　　要：以Au膜作金属催化剂、SiH4作为源气体,基于气-液-固（VLS）生长机制在n-Si（111）单晶衬底上制备出了Si纳米线.利用扫描电子显微镜对样品进行了结构表征,Si纳米线的直径为20-200 nm、长度为数微米到数十微米,X射线能量损失谱分析表明所制备的Si纳米线中含有少量的Au元素.讨论了生长温度、SiH4流量、Au膜层厚度和生长时间对Si纳米线的形成与结构的影响.Silicon nanowires were synthesized on n-Si（111） substrates using Au film as catalyst and SiH4 gas as a vapor phase reactant based on vapor-liquid-solid mechanism.The measurement of scanning electron microscopy shows that their diameters mainly range from 20～200 nm and their lengths are from several micrometers to dozens of micrometers.The composition is measured with energy-dispersive X-ray spectrometry.The effects of the growth temperature,SiH4 flow rate,thickness of Au film and growth time on the formation and structures of Si nanowires were discussed.

关 键 词：SI纳米线 Au催化 气-液-固生长 结构表征 

分 类 号：TB383[一般工业技术—材料科学与工程]