薄膜材料刃位错的求解  

Solution to the Edge Dislocation of Thin Film

作　　者：陈湘香[1,2] 陈惠芬[1] 陈锟[1] 刘克家[1] 

机构地区：[1]上海应用技术学院材料科学与工程学院,上海200235 [2]贵州大学材料科学与冶金工程学院,贵州贵阳550003

出　　处：《上海应用技术学院学报（自然科学版）》2009年第4期306-309,共4页Journal of Shanghai Institute of Technology: Natural Science

基　　金：上海市教委重点科研基金项目(05ZZ65)

摘　　要：以弹性力学的平面应力模型求解了材料的刃位错,论证了此解可描述薄膜材料的位错。与体相的位错结果比较表明,薄膜材料的位错具有较低的应力和较低的弹性能。将本文的结果应用于位错引起薄膜熔化理论,得到了薄膜的熔点低于体相的熔点。将薄膜中存在位错情况与材料表面情况进行类比,得出材料表面的熔点也将低于体相的熔点。The edge dislocation is studied,based on the plan stress case of the elastic theory.We argue that this kind of solution can be applied to describe the dislocation in a thin film,while the solution of plan stress model is suitable to describe the dislocation in the bulk.Results show that the strain field of the new model is lower than that of the plan strain one and so is the elastic energy.As an application,the solution is used in the theory of melting mediated by the dislocation,it is found that the thin film melting point is lower than that of the bulk.By comparing the environment of thin film with surface of bulk materials,one can deduce that the surface melting temperature,similar to that of thin film melting,is also lower than that of bulk.

关 键 词：位错 薄膜材料 表面熔化 

分 类 号：O484.2[理学—固体物理] O483[理学—物理]