pMOS场效应管的X射线和低能强电子束的瞬态电离辐照效应  

Effect of transient irradiation on pMOS FETs with x-rayand intensive pulsed low energy electron beam

作　　者：范隆[1,2] 靳涛[1,2] 何承发[1,2] 严荣良[1,2] 沈志康[1,2] 

机构地区：[1]中国科学院新疆物理研究所 [2]西北核技术研究所

出　　处：《核技术》1998年第9期534-538,共5页Nuclear Techniques

摘　　要：对电离辐照敏感的厚氧化层ｐＭＯＳ场效应管进行了Ｘ射线和低能强流电子束的瞬态辐照实验；通过对阈电压漂移的跟踪监测，研究了ｐＭＯＳ场效应管的瞬态电离辐照效应。运用辐射感生氧化物、界面缺陷模型并结合ＭＯＳ器件寄生二极管等效电路模型解释了实验结果。The pMOS FETs with thick oxide layer were irradiated with transient X-rays or intensive pulsed low energy electron beam, and the radiation effects were investigated by continuous measurement of the threshold voltage. The experimental . results were interpreted by means of the irradiation-induced oxide traps and interface traps in MOS structure, and the equivalent diode circuits of pMOS FETs under transient irradiation.

关 键 词：pMOS场效应管 瞬态 X射线 电子束 电离辐照 

分 类 号：TN432[电子电信—微电子学与固体电子学]