氧化镁薄膜二次电子发射系数的测试方法  

METHODS OF MEASURING THE SECONDARY ELECTRON EMISSION COEFFICIENT IN MgO FILMS

作　　者：龙建飞[1] 罗崇泰[1] 王多书[1] 李晨[1] 

机构地区：[1]兰州物理研究所表面工程技术国家级重点实验室,甘肃兰州730000

出　　处：《真空与低温》2009年第4期238-243,共6页Vacuum and Cryogenics

摘　　要：综述了氧化镁薄膜二次电子发射系数的主要测试方法,包括静电法、脉冲中和法、双枪法、热控法、单脉冲法以及PDP间接法等。阐述了各测试方法的原理以及在测试中各自的优点和不足。分析表明,脉冲中和法和双枪法比较适合用于测试氧化镁薄膜二次电子发射。The main methods of measuring the secondary electron emission coefficient in MgO films, including electrostatic method, pulsed neutralization method, double electron gun method, thermal control method, monopoles＇ method and indirect method in PDP are summarized. The principles of the methods and their advantages and disadvantages are expatiated respectively. Working conditions in methods of measuring are suggested. According to the analysis, pulsed neutralization method and double electron gun method are preferable.

关 键 词：测试方法 氧化镁薄膜 二次电子发射系数 

分 类 号：O484.42[理学—固体物理]