太阳能级P型硅放电切割电流特性  

Current Properties of Wire Electrical Discharge Machining of P-Type Solar Silicon

作　　者：邱明波[1,2] 刘志东[1,2] 汪炜[2] 田宗军[2] 黄因慧[1] 

机构地区：[1]南京航空航天大学江苏省精密与微细制造技术重点实验室,江苏南京210016 [2]南京航空航天大学机电学院,江苏南京210016

出　　处：《西南交通大学学报》2010年第1期23-27,共5页Journal of Southwest Jiaotong University

基　　金：国家自然科学基金资助项目(50975142);江苏省科学技术支撑计划资助项目(BE2009161);江苏省高技术研究计划项目(BG2007004)

摘　　要：为了提高太阳能级硅材料放电切割的效率,基于理论建模的方法,将硅材料放电切割过程抽象为简单的二极管-电阻电路模型,在恒压源的作用下分析其放电电流特性.理论推导发现,影响回路电流的主要因素是放电端二极管及体电阻的作用,随着放电温度的升高,二极管雪崩压降增大,阻碍了电流流过,热传导作用体电阻减小,促进电流流过,综合作用后,放电电流呈现出两边高中间平缓的U型曲线.在电火花线切割机床上加工电阻率2.1Ω.cm的P型太阳能级硅,抓取放电单脉冲电流波形,结果显示:放电电流从开始的4 A下降到3.2 A,到放电结束时,上升到5.2 A.实验结果与理论推导的放电电流特性一致.In order to improve the efficiency of wire electrical discharge machining （WEDM） of solar silicon, a diode-resistance （DR） circuit model for P-type solar silicon WEDM was created to analyze the current properties under constant voltage power supply. Theoretical analysis reveals that the circuit current is determined mainly by the diode at the discharge end and the body resistance of silicon. With the discharge continuing, the current is blocked by the increase of avalanche voltage of the diode due to high temperature, but is boosted by the decrease of body resistance due to heat transfer. As a result, a U-type discharge current curve is generated; i. e. , the discharge current is high on the both sides and flat in the middle. To verify the theoretical analysis, a P-type solar silicon with resistivity of 2.1Ω· cm was machined by WEDM in experiments, and a single pulse discharge was picked up. The experimental results show that the discharge current started dropped to 3.2 A, and rose to 5.2 A at the end of discharge, which confirms the characteristics of the solar silicon deduced by theoretical analysis. current waveform from 4 A, then discharge current characteristics of the solar silicon deduced by theoretical analysis.

关 键 词：太阳能级硅 电火花线切割 放电电流 雪崩电压 体电阻 

分 类 号：TG662[金属学及工艺—金属切削加工及机床] N301.1[自然科学总论]