一种高精度带隙基准电压源设计  

Design of High Precision Bandgap Voltage Reference

作　　者：刘军儒[1] 牛萍娟[1] 高铁成[1] 王亦伟[1] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160

出　　处：《现代电子技术》2010年第2期1-3,共3页Modern Electronics Technique

基　　金：国家"863"计划资助项目(2006AA03A154);天津市科技支撑计划资助项目(07ZCKFGX02100)

摘　　要：提出一种采用0.35μm CMOS工艺制作的带隙基准电压源电路,该电路具有高电源抑制比和低的温度系数。整体电路使用TSMC 0.35μm CMOS工艺,采用HSpice进行仿真。仿真结果表明,在-25^+125℃温度范围内温度系数为6.45 ppm/℃,电源抑制比达到-101 dB,电源电压在2.5~4.5 V之间,输出电压Vref的摆动为0.1 mV,功耗为0.815 mW,是一种有效的基准电压实现方法。A bandgap voltage reference circuit using 0. 35 um complementary CMOS process is presented. The circuit has high Power Supply Rejection Ratio（PSRR） and low - temperature coefficient. Simulation using HSpice based on the TSMC 0.35 um CMOS process. The results show the temperature coefficient is 6. 45 ppm/C between the temperature range of --25- ＋125℃ and the PSSR is the --101 dB. The bandgap output voltage Vref swing is 0. 1 mV when the supply voltage is 2.5-4.5 V and the power consumption is only 0. 815 mW. Therefore,it is an effective way to implement a bandgap voltage reference.

关 键 词：带隙基准电压源 电源抑制比 温度系数 HSPICE 

分 类 号：TN432[电子电信—微电子学与固体电子学]