射频交替溅射法制备的NiZn铁氧体薄膜的结构与磁性  

Structure and Magnetic Properties of NiZn Films Fabricated by Alternative Sputtering Technique

作　　者：王海波[1,2] 孙建荣[1] 王兰喜[1] 魏福林[1] 王丽[1] 王建波[1] 李发伸[1] 沈宝龙[2] 

机构地区：[1]兰州大学磁学与磁性材料教育部重点实验室,甘肃兰州730000 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315211

出　　处：《宁波大学学报（理工版）》2010年第1期115-117,共3页Journal of Ningbo University：Natural Science and Engineering Edition

摘　　要：使用交替靶射频溅射的方法在不同基底上制备得到了成分为NixZn1-xFe2O4的铁氧体薄膜,研究了NiZn铁氧体薄膜的生长条件,探讨了不同工艺条件对薄膜性能的影响,目的是提高薄膜饱和磁化强度Ms,降低薄膜矫顽力Hc,改善薄膜的软磁性能,以满足其在高频薄膜器件应用方面的需要.实验表明:沉积态薄膜即为尖晶石结构.并且通过不同实验条件对NiZn铁氧体薄膜性能影响的研究,得到了最佳的NiZn铁氧体薄膜的制备条件.NiZn ferrite thin films are prepared by alternative sputtering technique from two targets with the composition of NiFe2O4 and ZnFe2O4. The fabricating conditions on the performance of the films are studied to improve the saturation magnetization and reduce the coercivity of the films, making the films suitable to the applications of high-frequency film devices. The as-deposited films are characterized with spinel structure. In this paper, the optimal fabricating conditions are achieved through a variety of trial tests designated to observe how the magnetic properties ofNiZn ferrite films change.

关 键 词：NIZN铁氧体 薄膜 溅射 穆斯堡尔谱 

分 类 号：TB321[一般工业技术—材料科学与工程]