冶金级硅氧化精炼提纯制备太阳能级硅研究进展  被引量:14

Latest Progress in Purifying Metallurgical Grade Silicon into Solar Grade Silicon by Oxidation Refining

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作  者:伍继君[1,2] 戴永年[1,2] 马文会[1,2] 杨斌[1,2] 刘大春[1,2] 王烨[1,2] 魏奎先[1,2] 

机构地区:[1]昆明理工大学冶金与能源工程学院真空冶金国家工程实验室 [2]云南省有色金属真空冶金重点实验室,昆明650093

出  处:《真空科学与技术学报》2010年第1期43-49,共7页Chinese Journal of Vacuum Science and Technology

基  金:云南省自然科学基金(No.2009CD027);昆明理工大学测试基金(No.2009-037);国家自然科学基金资助项目(50674050)

摘  要:综述了目前冶金级硅氧化精炼制备太阳能级硅的研究进展,详细介绍了熔渣精炼、吹气氧化精炼和热等离子体精炼的方法和装置以及杂质的去除效果。研究发现:上述氧化精炼方法对硅中杂质元素Al、Ca、Cu、B、P等具有很好的去除效果;熔渣和吹气氧化精炼对Fe不明显,须借助于定向凝固方法才能彻底的去除;吹气氧化精炼和等离子体精炼对硅中B的去除效果十分明显,可使其降低至0.1ppmw以下,这为当前冶金法提纯制备太阳能级硅在技术和工艺上提供了很好的思路;通过氧化精炼,硅中杂质元素完全可以达到太阳能级硅的要求。本文提出,吹气氧化精炼(或等离子体精炼)与定向凝固精炼联合使用并形成规模化和连续化精炼装置是加快我国太阳能级硅产业化进程最切实可行的办法和措施。The latest progress in purifying metallurgical grade silicon into solar grade silicon by oxidation refining was tentatively reviewed in a thought provoking way. The discussions centered on the available equipments and technologies,such as the purification techniques of slagging,gas-blowing and thermal plasma. The strengths and weaknesses of the silicon purification techniques were compared and discussed in detail. Almost all the impurities in the metallurgical grade silicon, including Al, Ca, Cu, B, and P, can be completely eliminated by the above mentioned oxidation refining. Howere, the gas-blowing and slagging techniques fail to get rid of Fe impurities, which can only be removed by directional sohdification. The fact that the gas-blowing and thermal plasma refining methods are highly effective in removal of boron, reducing B-impurity to a trace lower than 0.1ppmw, inspires the idea to purifying metallurgical grade silicon. We suggest that the continuous equipment on industrial scale,developed by integrating the gas blowing (or thermal plasma) with directional solidification techniques,may boost production of solar grade silicon.

关 键 词:冶金级硅 太阳能级硅 氧化精炼  综述 

分 类 号:TG146[一般工业技术—材料科学与工程]

 

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