氢气流量对混合物理化学气相沉积法制备MgB_2超薄膜的影响  

EFFECT OF H_2 FLOW RATE ON ULTRA-THIN MgB_2 FILMS FABRICATED by HYBRID PHYSICAL-CHEMICAL VAPOR DEPOSITION

作　　者：黄煦[1] 孙玄[1] 王亚洲[1] 冯庆荣[1] 

机构地区：[1]北京大学物理学院,北京100871

出　　处：《低温物理学报》2010年第1期6-11,共6页Low Temperature Physical Letters

基　　金：国家自然科学基金(批准号:50572001);十一五"973计划"(批准号:2006CD601004);教育部优秀本科生基础科研基金(批准号:J0630311)资助的课题

摘　　要：用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)制备了MgB2超薄膜.在背景气体压强、B2H6的流量和成膜时间等条件一定的情况下,当氢气的流量从200到400sccm范围内变化时,观察了其对成膜的影响.结果显示,随氢气流量增大,膜表面粗糙度增大,同时膜面的连接性变好,伴随着样品的超导转变温度得到提高.对于平均厚度是10nm和15nm的样品,氢气流量分别是200sccm和300sccm时,Tc分别是26K和33K与28K和37K.We fabricated ultra-thin MgB2 films by hybrid physical-chemical vapor deposition. The effect of H2 flow rate ranging from 200~400sccm on the fabrication of the film was observed, with the same flow rate of 1- H6 and unified pressure for regulated time. The statistics show that the increase of H2 flow rate will increase the mean roughness of the film and enhance the connection between island-crystals therefore enlarger the mean size of island- crystals on the surface. An increase of Te depending on the H2 flow rate was also observed. The ultra-thin films with the thickness of 10nm deposited in a H2 flow rate of 200sccm obtained Tc of 26K, while a H2 flow rate of 300sccm obtained Tc of 33K. Meanwhile, Te of 15nm ultra-thin films changed from 28K to 37K when H2 flow rate changed as above.

关 键 词：MgB2超薄膜 HPCVD法 氢气流量 

分 类 号：TB383.2[一般工业技术—材料科学与工程]