c轴取向SiC衬底MgB_2超导厚膜的制备及性质  

THE STUDY OF SIC SUBSTRATE MgB_2 THICK FILMS GREW ALONG c AXIS

作　　者：孟胜[1] 张从尧[1] 冯庆荣[1] 

机构地区：[1]北京大学物理学院,北京100871

出　　处：《低温物理学报》2010年第1期12-15,共4页Low Temperature Physical Letters

基　　金：国家自然科学基金(批准号:No .50572001);国家"十一五"973计划(批准号:2006CB601004);教育部优秀本科生基础科研基金(批准号:J0630311)资助的课题

摘　　要：通过混合物理化学气相沉积法(Hybrid Physical-chemical Vapor Deposition,简称HPCVD),我们在SiC衬底上制备出了c取向8μm厚的MgB2超导厚膜.电性质测量表明其起始超导转变温度是41.4K,转变宽度为0.5K,剩余电阻比率RRR～7.磁性质测量表明5K和零场下样品的临界电流密度达到了1.7×106A/cm2.We have fabricated MgB2 thick films on SiC substrate grew along c axis by using hybrid physical-chemical vapor deposition （HPCVD） technique. The thickness was 8μm. Electric measurement showed that the Tc （onset） was 41.4K,and the transition width was 0.5K,the residual resistance ratio （RRR） was near 7. Magnetic measurement showed that the critical current density was 1.7×106A/cm2 at 5K in a self field.

关 键 词：混合物理化学气相沉积法 MgB2超导厚膜 R^T曲线 M^T曲线 M^H曲线 SEM图 

分 类 号：TM26[一般工业技术—材料科学与工程]