用于三相不解耦PFC的新型高压功率器件EBST  

Application of a new device EBST for three phase PFC

作　　者：刘松 丁颖[2] 

机构地区：[1]万代半导体元件上海有限公司,上海201203 [2]苏州工业园区工业技术学校,江苏苏州215123

出　　处：《电焊机》2010年第1期47-50,共4页Electric Welding Machine

摘　　要：介绍了一种兼有功率晶体管低导通压降和高额定电压特点以及功率MOSFET高开关速率特点的新型器件发射极开关双极型晶体管ESBT的结构,同时详细的阐述了这种新型器件的工作原理。还介绍了这种器件的驱动方法和专门针对三相不解耦PFC应用的驱动芯片以及电路设计的过程。实验表明:驱动芯片能够自动调整存储时间的长度从而保证ESBT在不同的负载条件下都处于优化的工作状态。The structure of a new device Emitter Switched Bipolar Transistors ESBT,whieh possesses low conduction voltage and high rated voltage owned by bipolar transistor and high switching frequency owned by power MOSFET,is introduced in detail. The operation principle is also presented.The methods for driving ESBT and the application of a dedicated driving IC for three phase PFC are provided.The test shows that the function of automatically adjusting storage time of this device ensures ESBT to operate at optimum state during different load.

关 键 词：功率因素校正 发射极开关双极型晶体管 驱动电路 存储时间 

分 类 号：TG431[金属学及工艺—焊接]