硅压力传感器的过载保护设计  

Overload Protection Design of Silicon Pressure Sensor

作　　者：王徐坚 

机构地区：[1]上海威尔泰工业自动化股份有限公司,上海201103

出　　处：《仪表技术与传感器》2010年第1期7-8,35,共3页Instrument Technique and Sensor

摘　　要：通过测量硅膜片的结构设计和压力传感器外界保护结构设计,实现了压力传感器过载保护的目的。针对差压传感器表现为正负双腔和中心过载保护膜片联动保护的设计方案,即当过载压力达到超高差压之前,使高压侧膜片和基体贴合,低压侧膜片鼓出,阻止超高差压传入传感器内;对于表压和绝压传感器表现为测量端和过载保护膜片联动的设计方案,即当过载压力达到超高压之前,使测量端膜片和基体贴合,过载保护膜片鼓起,阻止超高压传入传感器内。This paper was to achieve the overload protection for pressure sensor through the structural design of measuring silicon membrane and the structural design of external protection. Differential pressure sensor adopted the design of coupling protection between positive and negative chambers and central overload protective membrane, before the overload pressure reaches super high value, the membrane at higher pressure side keeps close to the body, and the membrane at lower pressure side is bulged, to prevent the super high differential pressure transferring into the sensor. Gauge and absolute pressure sensors adopted the design of coupling protection between measuring and overload protective membrane, before the overload pressure reaches super high value, measuring membrane keep close to the body, and the overload membrane is bulged, to prevent the super high pressure transferring into the sensor.

关 键 词：过载压力 过载保护 硅压力传感器 测量硅膜片 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]