基于Ⅱ-Ⅵ族半导体量子点的白光LED的研究进展  

Progress of White Light-Emitting Diodes Based onⅡ-ⅥSemiconductor Quantum Dots

作　　者：乐阳[1] 孙艳[1] 陈鑫[1] 戴宁[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外》2010年第2期8-13,共6页Infrared

基　　金：上海市科委基金(06XD14020;07JC14058);上海市纳米专项基金(0752nm016)

摘　　要：作为发光可覆盖整个可见光波段的发光材料,Ⅱ-Ⅵ族半导体量子点自上世纪90年代以来一直是构筑白光发光二极管(LED)的关键材料之一。本文主要介绍基于缺陷态发光、单源二色互补发光、三基色复合发光和光致发光等发光原理的半导体量子点的白光LED,并比较了不同类型器件的特点。凭借发光效率等主要性能参数的优势,基于GaN基蓝紫光与量子点荧光粉组合得到的白光LED将最有可能首先实现商业化应用。而在高清显示技术方面,结合微接触印刷技术的三基色复合白光LED具有潜在应用价值。最后简要介绍在提高白光LED发光效率方面的进展。Since the 1990s, as a luminescent material which is useful in the whole visible waveband, the Ⅱ-Ⅵ semiconductor quantum dot has been one of the key materials for white light-emitting diodes （LED）. The white quantum dot LEDs based on the luminescent principles such as defect state emission, single source binary complementary emission, mixed tricolour emission and pholuminescence are presented mainly and compared with each other. Because of the predominance in luminescent efficiency and so on, the white LEDs based on GaN blue-violet light and quantum dot fluorophores will be most likely used in commercial applications. In the aspect of high resolution displays, the mixed tricolour white LEDs using microcontact printing are promised potentially. Finally, the improvement of white LEDs in luminescent efficiency is presented in brief.

关 键 词：硒化镉 半导体量子点 核壳纳米结构 白光LED 

分 类 号：TN312.8[电子电信—物理电子学]