硫氰酸银钾复合薄膜的制备及其电存储特性  

Preparation and Electrical Memory Characteristics of Potassium Thiocyanate Argentite Composite Films

作　　者：季欣[1] 董元伟[1] 徐伟[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《物理化学学报》2010年第1期230-236,共7页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(60171008);上海市科委纳米中心项目(0452nm087)资助~~

摘　　要：采用真空热蒸镀法在银电极上蒸镀硫氰酸钾薄膜,并通过界面反应在银电极表面上形成AgK2(SCN)3复合薄膜.采用可见光谱、X射线光电子能谱(XPS)、激光拉曼光谱和X射线多晶衍射谱(XRD)对薄膜进行表征.研究发现,Al/AgK2(SCN)3/Ag器件具有稳定的可逆电双稳特性,高、低电阻状态的电阻比高达106,并能实现连续"写-读-擦-读"操作.器件的可逆擦写特性归因于外电场作用下AgK2(SCN)3复合介质层内导电通道的形成-断裂;电流-电压曲线拟合显示,低电阻状态符合欧姆传输,而高电阻状态表现出空间电荷限制电流传输模式.在导电通道断裂的过程中,电离作用和焦耳热效应会共同起作用.The vacuum thermal evaporation of KSCN onto the surface of a Ag electrode results in a AgK2（SCN）3 composite film through an interfacial reaction between the Ag and KSCN films.Visible spectroscopy,X-ray photoelectron spectroscopy（XPS）,Raman spectroscopy,and X-ray diffraction（XRD） were used to investigate the film.The Al/AgK2（SCN）3/Ag device exhibited reversible electrical bistability with a resistance ratio of 106 and it was successively operated in a＂write-read-erase-read＂mode.The reversible writing and erasing performance of the device is attributed to the formation and rupture of conducting channels through the AgK2（SCN）3 composite layer.By fitting the current-voltage curves,the low-and high-resistance states are shown to follow ohmic conduction and space charge limited current conduction,respectively.We suggest that the annihilation of conducting channels is caused by the electrochemical ionization together with the Joule heating effect.

关 键 词：电化学电离 电双稳态 导电通道 界面反应 真空热蒸发 焦耳热效应 

分 类 号：O646[理学—物理化学] O484.4[理学—化学]