掺磷中孔SiO_2在30℃～200℃范围内的质子导电性  

Proton Conduction of Mesoporous Phosphorus Hybrid SiO_2 at Temperature Range 30℃～200℃

作　　者：邹智毅[1] 魏小兰[1] 李丽坤[1] 付珍[1] 方军[2] 古国榜[1] 

机构地区：[1]华南理工大学化学与化工学院,广东广州510640 [2]厦门大学化学与化工学院化学与生物工程系,福建厦门361005

出　　处：《广州化工》2010年第2期54-56,67,共4页GuangZhou Chemical Industry

基　　金：科技部十一五"863"计划(2008AA05Z107);华南理工大学学生研究计划(SRP)

摘　　要：合成了孔壁掺磷中孔SiO2(m-PH-SiO2),其BET比表面积为407m2g-1,BJH平均孔径为6.1nm。用交流阻抗技术测定了除去游离P2O5的掺磷中孔SiO2在30℃～200℃范围内100%相对湿度下的质子电导,样品导电率随温度升高而升高,在150℃和100%相对湿度下,样品的电导可达3.1×10-3S·cm-1,比纯中孔SiO2(m-SiO2)的电导约高一个数量级,原因是m-PH-SiO2的物理吸附水量为31个分子/nm2,而m-SiO2只有24个分子/nm2。The mesoporous SiO2 with P2O5 hybrid in the pore walls（ m -PH -SiO2 ） but not impregnated in the pore tunnels was synthesized. The BET surface of m - PH - SiO2 was 407m^2g^-1 and the average pore size was 6. 1nm. The proton conductivity at temperature range 30℃ - 200℃ under 100% RH of the washed m - PH - SiO2 were measured by AC impedance technique. The conductivity of m - PH - SiO2 was enhanced with the increase of temperature, the value of proton conduction at 150℃ under 100% was 3.1× 10-3S ·cm^-1 higher than that of pure mesoporous SiO2 （m -SiO2 ） beacaus the m - PH - SiO2 can hold more H2O molecule. The number of H2O molecule on internal surface of m - PH - SiO2 was about 31 per nm2, and the value in m - SiO2 was only 24 per nm2 at the same condition.

关 键 词：掺磷中孔SiO2 中温 质子电导 

分 类 号：TQ424.1[化学工程] TB383[一般工业技术—材料科学与工程]